Single poly devices for monitoring the level and polarity of pro

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257522, 257296, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

058443002

ABSTRACT:
A monitoring device to monitor process induced charge employing a single layer of polysilicon forming a floating gate. The device comprises two capacitors, one for charging and the other for discharging a floating gate of an n-channel transistor. Embodiments which permit the monitoring of positive charge, negative charge and both positive and negative charge are described. The device is reusable and lends itself to in-line monitoring as opposed to some prior art devices used for end-of-line monitoring.

REFERENCES:
patent: 3660819 (1972-05-01), Frohman-Bentchkowsky
patent: 5239197 (1993-08-01), Yamamota
patent: 5281842 (1994-01-01), Yasuda et al.
patent: 5293055 (1994-03-01), Hara et al.
patent: 5301150 (1994-04-01), Sullivan et al.
patent: 5315145 (1994-05-01), Lukaszek
patent: 5373476 (1994-12-01), Jeon
patent: 5519243 (1996-05-01), Kikuda et al.
patent: 5576565 (1996-11-01), Yamaguchi et al.
"Single Poly EPROM Structure for use in Standard CMOS Processes" by Ohsaki, Asamoto, and Takagaki, Journal of Solid-State Circuits, vol. 29, Mar. 3, 1994, beginning at p. 311.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Single poly devices for monitoring the level and polarity of pro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single poly devices for monitoring the level and polarity of pro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single poly devices for monitoring the level and polarity of pro will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2397808

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.