Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-09-19
1998-12-01
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257522, 257296, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
058443002
ABSTRACT:
A monitoring device to monitor process induced charge employing a single layer of polysilicon forming a floating gate. The device comprises two capacitors, one for charging and the other for discharging a floating gate of an n-channel transistor. Embodiments which permit the monitoring of positive charge, negative charge and both positive and negative charge are described. The device is reusable and lends itself to in-line monitoring as opposed to some prior art devices used for end-of-line monitoring.
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"Single Poly EPROM Structure for use in Standard CMOS Processes" by Ohsaki, Asamoto, and Takagaki, Journal of Solid-State Circuits, vol. 29, Mar. 3, 1994, beginning at p. 311.
Alavi Mohsen
Aminzadeh Payman
Gasser Robert A.
Tyagi Sunit
Vandentop Gilroy J.
Intel Corporation
Meier Stephen
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