Single-photon detector with a quantum dot and a nano-injector

Details Single-photon detector with a quantum dot and a nano-injector Single-photon detector with a quantum dot and a nano-injector

2006-09-27

2010-06-29

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S009000, C257S012000, C257S014000, C257S015000, C257S017000, C257S025000, C257S030000

Reexamination Certificate

active

07745816

ABSTRACT:
A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo-generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-injector, capable of injecting carriers into the plurality of InP/AlInGaAs/AlGaAsSb layers, where the carrier transit time in the nano-injector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.

REFERENCES:
patent: 4688068 (1987-08-01), Chaffin et al.
patent: 5216262 (1993-06-01), Tsu
patent: 6603138 (2003-08-01), Arakawa et al.
patent: 6720589 (2004-04-01), Shields
patent: 7180648 (2007-02-01), Dohrman et al.

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