Single MOS transistor active pixel sensor cell with automatic an

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257290, 257291, 257292, 257445, 257462, H01L 31062

Patent

active

055875963

ABSTRACT:
The size of an active pixel sensor cell is reduced by utilizing a single MOS transistor formed in a well to perform the functions conventionally performed by a photogate/photodiode, a sense transistor, and an access transistor. Light energy striking the well varies the potential of the well which, in turn, varies the threshold voltage of the transistor. As a result, the current sourced by the transistor is proportional to the received light energy.

REFERENCES:
patent: 5191398 (1993-03-01), Mutoh
patent: 5289023 (1994-02-01), Mead
"A Randon Access Photodiode Array for Intelligent Image Capture", IEEE Transactions of Electron Devices, vol. 38, No. 8, Aug. 1991, Pecht et al.
Fossum, Eric R., "Active-Pixel Sensors Challenge CCDs", Laser Focus World, Jun. 1993, pp. 83-87.
Dickinson, A. et al., "tp 13.5: A 256.times.256 CMOS Active Pixel Image Sensor with Motion Detection", ISSCC95/SESSION 13/IMAGE SENSORS AND SYSTEMS/ PAPER TP 1., 1995.

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