Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-09-20
1996-12-24
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257290, 257291, 257292, 257445, 257462, H01L 31062
Patent
active
055875963
ABSTRACT:
The size of an active pixel sensor cell is reduced by utilizing a single MOS transistor formed in a well to perform the functions conventionally performed by a photogate/photodiode, a sense transistor, and an access transistor. Light energy striking the well varies the potential of the well which, in turn, varies the threshold voltage of the transistor. As a result, the current sourced by the transistor is proportional to the received light energy.
REFERENCES:
patent: 5191398 (1993-03-01), Mutoh
patent: 5289023 (1994-02-01), Mead
"A Randon Access Photodiode Array for Intelligent Image Capture", IEEE Transactions of Electron Devices, vol. 38, No. 8, Aug. 1991, Pecht et al.
Fossum, Eric R., "Active-Pixel Sensors Challenge CCDs", Laser Focus World, Jun. 1993, pp. 83-87.
Dickinson, A. et al., "tp 13.5: A 256.times.256 CMOS Active Pixel Image Sensor with Motion Detection", ISSCC95/SESSION 13/IMAGE SENSORS AND SYSTEMS/ PAPER TP 1., 1995.
Bergemont Albert
Chi Min-hwa
Haggag Hosam
National Semiconductor Corporation
Tran Minhloan
LandOfFree
Single MOS transistor active pixel sensor cell with automatic an does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single MOS transistor active pixel sensor cell with automatic an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single MOS transistor active pixel sensor cell with automatic an will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1180374