Single-mask phase change memory element

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means

Reexamination Certificate

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C257S208000, C257S211000, C257S246000, C257S247000, C257S248000, C257S758000, C257S759000, C257S760000, C257S776000, C257S907000

Reexamination Certificate

active

07423300

ABSTRACT:
A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a parallel array of bit lines extends in a second direction, connecting each memory element to a data source, the second direction forming an acute angle to the first direction. The connection between each bit line and each memory element is a phase change element composed of memory material having at least two solid phases.

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