Metal treatment – Compositions – Heat treating
Patent
1979-03-06
1981-01-13
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
148187, 357 34, 357 43, 357 91, H01L 21263, B01J 1700
Patent
active
042447526
ABSTRACT:
A method of fabricating an integrated circuit having a plurality of different devices, which method employs a single mask to define the active areas of all such devices. A silicon oxide-silicon nitride layer is formed on the surface of a silicon wafer so as to define the location of subsequent oxide insulating layers which in turn actually define all the active areas of the circuit. Respective active areas for the different devices can then be formed by selective ion implantation.
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Enomoto et al., ". . . Oxidation . . . Si.sub.3 N.sub.4 Film . . . "Jap. Journ. Appl. Phys. 17 (1978) 1049.
Baldwin Steven M.
Henderson, Sr. Donald L.
Pong Raymond
Burroughs Corporation
Fassbender Charles J.
Peterson Kevin R.
Roy Upendra
Rutledge L. Dewayne
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