Single-mask fabrication process for linear and angular...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C257S414000, C216S002000

Reexamination Certificate

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07939355

ABSTRACT:
An accelerometer and a method of fabricating an integrated accelerometer comprises the steps of providing an SOI wafer with a selected resistivity to eliminate any need for additional doping of the SOI wafer, providing a single mask on the SOI wafer, and simultaneously defining all components of the accelerometer in the SOI wafer without using any pn-junctions to define any piezoresistive components and to provide the same resistivity of all components. The step of simultaneously defining all components of the accelerometer in the SOI wafer comprises defining all components of a linear or angular accelerometer.

REFERENCES:
patent: 5750420 (1998-05-01), Bono et al.
patent: 6365056 (2002-04-01), Robert et al.
patent: 6389899 (2002-05-01), Partridge et al.
patent: 6960488 (2005-11-01), Brosnihan et al.
Partridge, A. et al., “A High Performance Planar Piezoresistive Accelerometer,” IEEE Journal of Microelectromechanical Systems, (JMEMS), vol. 9, No. 1, Mar. 2000, pp. 58-66.

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