Single level masking process with two positive photoresist layer

Gas separation: apparatus – Electric field separation apparatus – Electrode cleaner – apparatus part flusher – discharger – or...

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96 36, 156651, 156661, 204 15, 204 23, 427 43, 427 89, 427123, 427259, 427265, 427304, 427328, G03C 500

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040884902

ABSTRACT:
This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.

REFERENCES:
patent: 3506441 (1970-04-01), Gottfried
patent: 3745094 (1973-07-01), Greene
patent: 3955981 (1976-05-01), Stachniak
patent: 3957552 (1976-05-01), Ann et al.

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