Single layer poly fabrication method and device with shallow emi

Details Single layer poly fabrication method and device with shallow emi Single layer poly fabrication method and device with shallow emi

1986-04-18

1988-01-26

Roy, Upendra

Fishing, trapping, and vermin destroying

357 34, 357 91, 437 33, 437 70, H01L 21265, H01L 2120, H01L 21425

Patent

active

047216859

ABSTRACT:
A method for fabricating high performance bipolar transistors using a single polycrystalline silicon layer whereby horizontally and vertically scaled base/emitter junctions are achieved. In an extrinsic base transistor, a composite sandwich of overlying layers of poly silicon, oxide and nitride are deposited over a substrate containing field oxide isolated monocrystalline transistor sites having buried subcollectors and sinker regions. The composite sandwich is thereafter selectively oxidized to define base, emitter and collector regions with the relative thickness of the composite sandwich and the grown oxide being controlled to assure proper horizontal extrinsic base to emitter spacings and shallow vertical intrinsic base to emitter junctions, upon completing subsequent implant and annealing steps. Each active transistor site is also surrounded by a ring-like, channel stopper which is physically isolated from the channel stopper of each other device.

REFERENCES:
patent: 4387953 (1983-05-01), Ho et al.
patent: 4437897 (1984-03-01), Kemlage
patent: 4440580 (1984-06-01), Gahle
patent: 4477965 (1984-10-01), Blossfeld
patent: 4535531 (1985-08-01), Bhatia et al.
patent: 4573256 (1986-03-01), Lechaton et al.
patent: 4573257 (1986-03-01), Hulseweh
patent: 4622738 (1986-11-01), Gwozdz et al.

Affiliated with

Also associated with

Rating

Single layer poly fabrication method and device with shallow emi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single layer poly fabrication method and device with shallow emi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single layer poly fabrication method and device with shallow emi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1468011