Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-04-14
2000-05-23
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257472, 257744, H01L 310328
Patent
active
060668652
ABSTRACT:
An enhancement mode periodic table group III-IV semiconductor field-effect transistor device is disclosed. The disclosed transistor includes single metallization for ohmic and Schottky barrier contacts, a permanent non photosensitive passivation layer (a layer which has also been used for masking purposes during fabrication of the transistor) and a gate element of small dimension and shaped cross section as needed to provide desirable microwave spectrum electrical characteristics. The transistor of the invention is fabricated from undoped semiconductor materials disposed in a layered wafer structure and selectively doped by ion implantation to achieve either a p-channel or an n-channel transistor. The semiconductor materials may include two, one or zero buffer layers in their layer structure. The disclosed transistor is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.
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Bozada Christopher A.
Cerny Charles L. A.
DeSalvo Gregory C.
Dettmer Ross W.
Ebel John L.
Chaudhuri Olik
Hollins Gerald B.
Kundert Thomas L.
The United States of America as represented by the Secretary of
Wille Douglas A.
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