Single-layer-electrode type two-phase charge coupled device havi

Details Single-layer-electrode type two-phase charge coupled device havi Single-layer-electrode type two-phase charge coupled device havi

1997-06-27

2000-01-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257245, H01L 27148, H01L 29768

Patent

active

060181702

ABSTRACT:
In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge transfer electrodes are in self-alignment with potential barrier regions.

REFERENCES:
patent: 4087832 (1978-05-01), Jambotkar
patent: 4652339 (1987-03-01), Bluzer et al.
patent: 5270559 (1993-12-01), Yariv et al.
patent: 5345099 (1994-09-01), Yamada

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