Single-layer-electrode type charge coupled device having double

Details Single-layer-electrode type charge coupled device having double Single-layer-electrode type charge coupled device having double

2000-03-27

2000-12-26

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438721, 438723, 438738, H01L 2100

Patent

active

061659088

ABSTRACT:
In a charge coupled device, a plurality of charge transfer electrodes are formed on a first insulating layer formed on a semiconductor substrate. Each of the charge transfer electrodes is formed by a first conductive layer and a second conductive layer narrower than the first conductive layer. A second insulating layer having the same area as the second conductive layer and is formed on the second conductive layer. A sidewall insulating layer is formed on sidewalls of the second insulating layer and the second conductive layer.

REFERENCES:
patent: 5296653 (1994-03-01), Kiyota et al.
patent: 5428231 (1995-06-01), Tanaka et al.
Kwok K. Ng, "Chapter 15--Charge-Coupled Device", Complete Guide to Semiconductor Devices, pp. 132-142.
N. Tanaka et al., "Study of single-layer metal-electrode CCD image sensor", Proceedings of the Institute of Television Engineers of Japan, vol. 50, No. 2, 1996, pp. 234-240.

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