Single junction charge injector floating gate memory cell

Details Single junction charge injector floating gate memory cell Single junction charge injector floating gate memory cell

1979-09-07

1981-12-08

James, Andrew J.

357 42, 357 51, 357 54, H01L 2978, H01L 2702, H01L 2934

Patent

active

043050832

ABSTRACT:
A single charge injector, floating gate memory cell wherein the injector diode is defined by an ion implanted region of opposite conductivity type from that of the semiconductor substrate and by a diffused region having the same conductivity type as but higher conductivity than the substrate. Equal hole and electron injection efficiencies can be obtained from this single charge injector. A three terminal access cell having a compact structure is obtained by use of a thick oxide read transistor located between the injector diode and the bootstrap capacitor. The read transistor together with a single address transistor for the cell are connected to the injector diode.

REFERENCES:
patent: 4035820 (1977-07-01), Matzen
patent: 4037242 (1977-07-01), Gosney
patent: 4106045 (1978-08-01), Nishi
patent: 4158238 (1979-06-01), Erb
patent: 4163985 (1979-08-01), Schuermeyer
patent: 4222063 (1980-09-01), Rodgers
IBM Technical Disclosure Bulletin, by Terman, vol. 14, No. 12, May 1972, p. 3721.
IBM Technical Disclosure Bulletin, by James, vol. 16, No. 2, Jul. 1973, pp. 690 and 691.

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