Single ion implantation system

Details Single ion implantation system Single ion implantation system

1994-04-26

1996-07-23

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250309, 250398, H01J 37317

Patent

active

055392032

ABSTRACT:
The present invention is directed to a low-energy (0 to 100 keV) or high-energy (1 to 4 MeV) single ion implantation system in which single ions are extracted from a focused ion beam or micro-ion beam by beam chopping. The low-energy single ion implantation system has, in combination with a focused ion beam system, an electrostatic deflector for beam chopping (20), an aperture for single ion extraction (21) and an electrode (35) for generating a retarding electric field to make the single ion soft-land on a specimen. The high-energy single ion implantation system has, in combination with an ion microprobe, a Cs sputter source (33) which enables dopant ion implantation and high LET ion irradiation. The single ion implantation method includes a step of implanting the extracted single ions from the both systems into the specimen at a predetermined target position with aiming accuracies of 50 nm.phi. and 1.5 .mu.m.phi., respectively.

REFERENCES:
patent: 4063091 (1977-12-01), Gee
patent: 4626690 (1986-12-01), Todokoro et al.
patent: 5182453 (1993-01-01), Hayashi
patent: 5331161 (1994-09-01), Ohdomari et al.
patent: 5349196 (1994-09-01), Amemiya et al.
Kaiser et al Direct Investigation . . . Physical Review Letters Apr. 1988.
Morita et al Growth of Native Oxide . . . J. Appl. Phys. 68 (3) Aug. 1990.
Yasaka et al Chemical Stability . . . Japanese J. Appl. Phys. Dec. 1991.
Schulz et al Single, Individual . . . Physica Scripta 1991.
Ohdomari et al The Structural Models . . . J. of Non-Crystalline. . . 1987.
Odhomari et al Study of the Interfacial . . J. Appl. Phys. 62(9) Nov. 1987.
Fukuda et al Process Dependence of . . . J. Appl. Phys. 72(5) Sep. 1992.
Schubert Delta Doping of III-V . . . J. Vac. Sci. Technol May/Jun./1990.
Landauer Spatial Variation of . . . IBM Journal Jul. 1957.
Buttiker Four-Terminal Phase . . . Physical Review Letters Oct./1986.
McLennan et al Voltage Drop in . . . Physical Review B Jun. 1991.
Hiramoto et al One-Dimensional GaAs . . . Appl. Phys. Lett. 51(20) Nov. 1987.
Hirayama et al Electronic Transport . . . Physical Review B Mar. 1989.
May et al Alpha-Particle-Induced . . . IEEE Trans. Elect . . . Jan. 1979.
Shino et al Single Event Effects . . . IEEE Trans. Nucl. Sci. Dec. 1986.
Horn et al Nuclear Microprobe . . . IEEE Trans. Nucl. Sci. Feb. 1992.
Noritake et al Site Dependence of Soft . . . Jpn. J. Appl. Phys. Jun. 1992.
Car et al Microscopic Theory of . . . Physical Review Letters May 1984.
Sugino et al Pressure Dependence of . . . Materials Science Forum 1992.
Fischer Single-Particle Tech. Nucl. Intr. & Methods . . . 1991.
Ohdomari et al Ion Microprobe System . . . Nucl. Intr. & Methods . . . 1991.
Sawaragi et al A Focused Beam System . . . J. Vac. Sci Technol Sep./Oct./1991.

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