Single filament semiconductor laser with large emitting area

Details Single filament semiconductor laser with large emitting area Single filament semiconductor laser with large emitting area

1981-04-06

1982-08-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

043474861

ABSTRACT:
A body of a semiconductor material of a Group III-V compound or alloy of such compounds includes a substrate of one conductivity type with a pair of spaced, substantially parallel grooves in a surface thereof. Over the surface of the substrate and the grooves are, in sequence, a buffer epitaxial layer of the one conductivity type, a first confinement epitaxial layer of the one conductivity type, a guide epitaxial layer of the one conductivity type, an active epitaxial layer which is the active recombination layer, a second confinement epitaxial layer of the opposite conductivity type and a cap epitaxial layer of the opposite conductivity type. The epitaxial layers are of materials forming heterojunctions between the first confinement layer and the guide layer, and between the active layer and second confinement layer. The material of the active layer has an index of refraction larger than that of the materials of the first and second confinement layers, the material of the guide layer has an index of refraction less than that of the active layer but greater than that of each of the confinement layers. The guide layer and active layer have a region of uniform thickness directly over the space between the grooves.

REFERENCES:
patent: 3887404 (1975-06-01), Chane
patent: 3978428 (1976-08-01), Burnham et al.
patent: 3983510 (1976-09-01), Hayashi et al.
patent: 4166253 (1979-08-01), Small et al.
patent: 4185256 (1980-01-01), Scifres et al.
patent: 4215319 (1980-07-01), Botez
Botez et al., "Constricted Double-Heterostructure (AlGa)As Diode Lasers", Appl. Phys. Letters, vol. 32, No. 4, Feb. 15, 1978, pp. 261-263.
Kressel et al., "Large Optical Cavity Lasers--Symmetrical and Asymetrical Structures", Semiconductor Laser and Heterojunction LEDs, Academic Press, 1977, pp. 230-234.
Scifres et al., Appl. Phys. Letters, vol. 32, No. 10, May 15, 1978, pp. 658-661.
Single-Mode CW Operation of "Double--Dovetail", Constricted DH (AlGa)As Diode Lasers, Appl. Phys. Letters, vol. 33, pp. 872-874, Nov. 15, 1978.

Affiliated with

Also associated with

Rating

Single filament semiconductor laser with large emitting area does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single filament semiconductor laser with large emitting area, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single filament semiconductor laser with large emitting area will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2186401