Single field emission device

Details Single field emission device Single field emission device

1995-03-22

1997-03-11

Arana, Louis M.

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

313495, 313496, 313497, H01J 146, H01J 162

Patent

active

056104715

ABSTRACT:
A field emission device (100) uses single crystals in order to eliminate grain boundaries within some or all of the electrodes (103, 104, and 205). The elimination of grain boundaries reduces susceptibility to damage, improves stability of the device (100), and improves uniformity and reproducibility among devices. In a preferred embodiment, the emitter and gate electrodes (103 and 104 respectively) are formed from a single crystal thin film (302). In other embodiments, other structures are employed wherein one or more of the electrodes (103, 104, and 205) are formed from single crystals.

REFERENCES:
patent: 3947716 (1976-03-01), Fraser, Jr. et al.
patent: 5214347 (1993-05-01), Gray
patent: 5217401 (1993-06-01), Watanabe
patent: 5245247 (1993-09-01), Hosogi
patent: 5300853 (1994-04-01), Watanabe
patent: 5319233 (1994-06-01), Kane
patent: 5329207 (1994-07-01), Cathey
patent: 5343110 (1994-08-01), Kaneko
patent: 5382867 (1995-01-01), Maruo
Spitzer, Stuart M. et al. "A Brief Review of the State of the Art and Some Recent Results on Electromigration in Integrated Circuit Aluminum Metallization," Electrochemical Science, Oct. 1969, V. 116, No. 10, pp. 1368-1372.
Wolfe, J.E. "Operational Experience with Zirconiated T-F Emitters," J. Vac. Sci. Technol., 16(6), Nov./Dec. 1979, pp. 1704-1708.
Jones, Gary W. "Self Aligned Vertical Field Emitter Devices Fabricated Utilizing Liftoff Processing," 3d Int'l Vacuum Microelectronics Conf. Jul. 23-25, 1990, p. 1-2.
Warner, K. et al. "Oxidation Sharpened Gated Field Emitter Array Process," 3d Int'l Vacuum Microelectronics Conf., Jul. 23-25, 1990, p. 25.
Branston, David W. et al. "Field Emission from Metal Coated Silicon Tips," 3d Int'l Vacuum Microelectronics Conf., Jul. 23-25, p. 5-4.
Marcus, R.B. "Formation of Sharp Silicon and Tungsten Tips," 3d Int'l Vacuum Microelectronics Conf., Jul. 23-25, 1990, pp. 1-3.
Bandy, S. et al. "Thin Film Emitter Development," Technical Digest of IVMC 91, Aug. 1991, pp. 118-119.

Affiliated with

Also associated with

Rating

Single field emission device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single field emission device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single field emission device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-445773