Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2004-05-14
2008-08-19
Rosasco, Stephen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07413833
ABSTRACT:
An active area pattern is formed atop a deep trench pattern with a single exposure using an alternative phase-shift mask. To prevent adjacent spaces of opposite phase from intersecting one another at the ends of substantially opaque features of the active area pattern, one or more connectors are used to connect the ends of the substantially opaque patterns. Trench regions of the deep trench pattern are arranged such that the conduction path of the connectors are interrupted and prevent the lines from shorting to one another. Alternatively, a bit line pattern or a word line pattern having a lines and spaces array and a support region are printed with a single exposure using an alternating phase-shift mask. At one end of the array region, lines having a respective phase shift extend into the support region, and lines of the opposite phase shift are terminated. At the opposite end of the array, the lines that have the opposite phase shift extend into the support region, and the lines of having the respective phase shift are terminated.
REFERENCES:
patent: 6841309 (2005-01-01), Alpay et al.
patent: 2004/0229129 (2004-11-01), Allen et al.
Bukofsky Scott
Butt Shahid
Divakaruni Ramachandra
Ellis Wayne
Radens Carl
Infineon - Technologies AG
International Business Machines - Corporation
Rosasco Stephen
Slater & Matsil L.L.P.
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