Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-06-19
1998-03-24
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 14, 257 24, 257 39, H01L 2906, H01L 3900
Patent
active
057315981
ABSTRACT:
The single electron tunnel device of this invention includes: a multiple tunnel junction layer including multiple tunnel junctions; and first and second electrodes for applying a voltage to the multiple tunnel junction layer, wherein the multiple tunnel junction layer includes an electrically insulating thin film and metal particles and/or semiconductor particles dispersed in the electrically insulating thin film.
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"A Room-Temperature Single-Electron Memory Device Using Fine-Grain Polycrystalline Silicon" Yano, et al. ULSI Research Center, Hitachi Central Research Laboratory, Kokubunji, Tokyo 185, Japan .COPYRGT.1993 IEEE IDEM 541-543.
Wang et al., "Charging Effects Observed By Low-Temperature Scanning Tunnelling Microscopy Of Gold Islands", Surface Science, vol. 322, No. 1-3, pp. 325-336, Jan. 1995.
Katayama et al.; "A New Field-Effect Transistor Based On The Metal-Insulator Transition", Journal Of Applied Physics, vol. 79, No. 5, pp. 2542-2548, Mar. 1996.
"A Room-Temperature Single-Electron Memory Device using Fine Grain Poly Crystalline Silicon" Yano et al IDEM 541-543 1993.
Kado Hiroyuki
Manabe Yoshio
Tanahashi Ichiro
Tohda Takao
Crane Sara W.
Matsushita Electric - Industrial Co., Ltd.
Wille Douglas
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