Single electron transistor manufacturing method by...

Details Single electron transistor manufacturing method by... Single electron transistor manufacturing method by...

2006-06-27

2006-06-27

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S969000

Reexamination Certificate

active

07067341

ABSTRACT:
A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.

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Hori, M., et al., “Sub-5 nm Gold Dot Formation Using Retarding-Field Single Ion Deposition,”Applied Physics Letters 73(22):3223-3225, Nov. 30, 1998.

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