Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2011-05-03
2011-05-03
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257SE51040
Reexamination Certificate
active
07935989
ABSTRACT:
A single-electron transistor comprising at least a substrate, a source electrode and a drain electrode formed on top of the substrate opposing to each other, and a channel arranged between the source electrode is disclosed wherein the channel is composed of ultra fine fibers. By having such a constitution, a sensor can have excellent sensitivity.
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Hosoi Hirotaka
Ishii Atsushi
Kida Hiroshi
Matsumoto Kazuhiko
Mukasa Koichi
Crowell & Moring LLP
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology
Quinto Kevin
Tran Minh-Loan T
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