Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-12-26
1998-11-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 9, H01L 2906
Patent
active
058380213
ABSTRACT:
Disclosed are single electron digital devices, in which the screening lengths of individual device islands are between 0.5 and 1.0 islands. This range permits island occupancy to be bias independent, permitting the devices to hold or process digital information independent of device biases. This range of screening lengths can be effected by choice of device parameters which are sufficiently modest to permit practical fabrication of these devices.
REFERENCES:
patent: 5665979 (1997-09-01), Takahashi et al.
M.G. Ancona et al., Simple Computation Using Coulomb Blockade-Based Tunnelling Arrays, J. Appl. Phys, 77(1), (Jan. 1, 1995).
M.G. Ancona, Design of Computaionally Useful Single-Electron Digital Circuits, J. Appl. Phys. 78(12) (Dec. 15, 1995).
Letter from Klingensmith to Miles re reference AA, above.
R.W. Rendell, Effect of Polarization Screening Length on Electron-Pump Cotunneling Errors, Physical Review B, 52, 4684 (No. 7, (Aug. 15, 1995).
M.G. Ancona, Systolic Processor Designs Using Single-Electron Digital Circuits, Superlattices and Microstructures, vol. 20, No. 3 (1996).
J. Martinis et al., Metrological Accuracy of the Electron Pump, Physical Review Letters, 72, 904 (No. 6, Feb. 7, 1994).
M.W. Keller et al., Accuracy of Electron Counting Using a 7-Junction Electron Pump, Applied Physics Letters, 69, 1804 (No. 12, Sep. 16, 1996).
L.J. Geerligs et al., Frequency-Locked Turnstile Device for Single Electrons, Physical Review Letters 64, 2691 (No. 22, May 28, 1990).
G. Zimmerli et al., Voltage Gain in the Single Electron Transistor, Applied Physics Letters 61, 2616 (No. 21, Nov. 23, 1992).
M. Ancona, Single-Phase Single Electron Digital Circuits, Journal of Applied Physics 81, 3311 (No. 7, Apr. 1, 1997).
Jackson Jerome
Kelley Nathan K.
McDonnell Thomas E.
Miles Edward F.
LandOfFree
Single electron digital circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Single electron digital circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single electron digital circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-886839