Patent
1973-09-24
1977-03-22
Wojciechowicz, Edward J.
357 23, H01L 2978
Patent
active
040140369
ABSTRACT:
A charge-coupled random access memory cell is formed in a semiconductor body divided into three adjacent regions. The first region has an impurity diffused therein and serves alternately as a source and a drain for charge carriers. The second or gate region has a predetermined threshold voltage and the third or storage region has a lower threshold voltage. A single unitary metal electrode extends in superimposed relation to the second and third regions. Upon the application of potentials to the first region and the electrode, charge carriers may be stored in or removed from the third region so as to write a "1" or a "0" in the cell.
REFERENCES:
patent: 3533089 (1970-10-01), Wahlstrom
patent: 3651349 (1972-03-01), Kahng et al.
patent: 3654499 (1972-04-01), Smith
Ho Irving T.
Yu Hwa N.
IBM Corporation
Stoffel Wolmar J.
Wojciechowicz Edward J.
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