Single-electrode charge-coupled random access memory cell

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357 23, H01L 2978

Patent

active

040140369

ABSTRACT:
A charge-coupled random access memory cell is formed in a semiconductor body divided into three adjacent regions. The first region has an impurity diffused therein and serves alternately as a source and a drain for charge carriers. The second or gate region has a predetermined threshold voltage and the third or storage region has a lower threshold voltage. A single unitary metal electrode extends in superimposed relation to the second and third regions. Upon the application of potentials to the first region and the electrode, charge carriers may be stored in or removed from the third region so as to write a "1" or a "0" in the cell.

REFERENCES:
patent: 3533089 (1970-10-01), Wahlstrom
patent: 3651349 (1972-03-01), Kahng et al.
patent: 3654499 (1972-04-01), Smith

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