Single diffusion process for fabricating semiconductor devices

Details Single diffusion process for fabricating semiconductor devices Single diffusion process for fabricating semiconductor devices

1992-02-11

1993-02-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 30, 437149, 148DIG126, H01L 2122, H01L 21266

Patent

active

051871173

ABSTRACT:
A simplified process of making an insulated gate transistor entails forming the active regions in a single diffusion step. The method includes the steps of implanting and diffusing impurities of a first conductivity type (p for n-channel devices), implanting and diffusing a heavy dose of impurities of the same conductivity type (p+ for n-channel devices), and implanting and diffusing impurities of the other conductivity type (n+ for n-channel devices), wherein the three types of impurities are diffused at the same time in the same step. In a preferred embodiment of an n-channel process, the p-type dopant is boron and the n-type is arsenic.

REFERENCES:
patent: Re32800 (1988-12-01), Han et al.
patent: 4456488 (1984-06-01), Gahle
patent: 4697333 (1987-10-01), Nakahara
patent: 5023191 (1991-06-01), Sakurai

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