Single crystals, method for making single crystals by growth...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

Reexamination Certificate

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C117S069000, C117S070000, C117S902000, C117S948000

Reexamination Certificate

active

06929693

ABSTRACT:
The invention relates to a tetragonal single crystal (1, 11) of composition:in-line-formulae description="In-line Formulae" end="lead"?Z(H,D)2MO4in-line-formulae description="In-line Formulae" end="tail"?where Z is an element or a group of elements, or a mixture of elements and/or of groups of elements chosen from the group K, N(H,D)4, Rb, Ce where M is an element chosen from the group P, As and where (H,D) is hydrogen and/or deuterium comprising an approximately parallelepipedal region of large dimensions, especially one in which the length of each of the edges of the faces, AC1, AC2, AC3, is greater than or equal to 200 mm, in particular greater than or equal to 500 mm, which crystal is obtained by crystal growth from solution, from an approximately parallelepipedal single-crystal seed (2, 22) whose edges of the faces have lengths of AG1, AG2, AG3.

REFERENCES:
patent: 4517048 (1985-05-01), Shlichta
patent: 4670117 (1987-06-01), Yoshida et al.
patent: 5904772 (1999-05-01), Montgomery et al.
patent: 0 586 366 (1994-03-01), None
patent: 2 764 909 (1998-12-01), None
NP Zaitseva et al.: “Rapid growth of large-scale (40-55 cm) K2PO4 crystals” Journal of Crystal Growth, vol. 180, no. 2, pp. 255-262.
Osamu Shimomura: “Growth and evaluation of large KDP single crystals for high-power harmonic generation by temperature decrease and method” Electronics & Communications in Japan, Part II—Electronics, vol. 71, pp. 91-100 1988.
Opilski et al.: “The crystal growth kinetics of ammonium dideuterium arsenale” Journal of Crystal Growth, vol. 29, pp. 173-175 1975.

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