Single crystal wafers and a method of preparation thereof

Details Single crystal wafers and a method of preparation thereof Single crystal wafers and a method of preparation thereof

1997-10-14

1999-10-05

Breneman, R. Bruce

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

117902, 117920, H01L 21306

Patent

active

059629150

ABSTRACT:
Improved commercial single crystal wafers (250), as shipped to end users form a full circle, and comprise a "stress concentration notch" (172) which accurately defines a desired cleavage plane. The stress concentration notch is introduced into the wafers in bulk by means of a properly oriented cut along the length of a single crystal ingot, after machining the ingot to the desired end product diameter, and prior to sawing the ingot into slices. The stress concentration notch uniquely defines the first and second faces of the wafer.

REFERENCES:
patent: 4588473 (1986-05-01), Hisatomi
patent: 5494862 (1996-02-01), Kato

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