Single-crystal wafer having a superconductive ceramic thin film

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505701, 505702, 505703, 505704, 4284111, 428688, 428699, 428700, 428930, B32B 900

Patent

active

049686640

ABSTRACT:
A superconductive ceramic thin film-formed single-crystal wafer comprising a single-crystal wafer, an intermediate ceramic thin film formed on a surface of the single-crystal wafer, and a superconductive ceramic thin film formed on the intermediate ceramic thin film. The intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio of Bi.sub.2 Sr.sub.2 Ca.sub.x O.sub.y (provided that x: 1 to 2; and y: 6 to 7), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10. Alternatively, the intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl.sub.1 Ba.sub.2 Ca.sub.s O.sub.t (provided that s: 1 to 2; and t: 4.5 to 5.5) and Tl.sub.2 Ba.sub.2 Ca.sub.v O.sub.w (provided that v: 1 to 3; and w: 6 to 8), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl.sub.2 Ba.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8, Tl.sub.1 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10, Tl.sub.1 Ba.sub.2 Ca.sub.1 Cu.sub.2 O.sub.7, Tl.sub.1 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.9, and Tl.sub.1 Ba.sub.2 Ca.sub.3 Cu.sub.4 O.sub.11.

REFERENCES:
CA 111 (26):245688u, SC Properties of BaYCuO Thin Films, Yamaguchi et al., 1989.
CA 111 (14):125175c, SC on Cheap Substrate with Ceramic Interlayer, Takano et al., 2-28-89.

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