Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Reexamination Certificate
2001-07-06
2008-12-02
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
C257S627000, C257S628000, C257SE21230, C257SE21193, C257SE21244
Reexamination Certificate
active
07459720
ABSTRACT:
The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a [100] axis of single crystal by angles of α (0°<α<90°) for the [011] direction, β (0°<β<90°) for the [01-1] direction and γ (0°≦γ<45°) for the [10-1] or [101] direction. Thus, a single crystal wafer that can sufficiently bear device production processes even with a small wafer thickness is provided and thereby loss of single crystal raw material is reduced. Further, by using such a wafer, MIS type semiconductor devices and solar cells are provided at a low cost.
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Ito Tatsuo
Kanaya Koichi
Ohmi Tadahiro
Sugawa Shigetoshi
Hogan & Hartson LLP
Sefer Ahmed
Shin-Etsu Handotai & Co., Ltd.
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