Single crystal, single crystal wafer, epitaxial wafer, and...

Details Single crystal, single crystal wafer, epitaxial wafer, and... Single crystal, single crystal wafer, epitaxial wafer, and...

2008-07-08

2008-07-08

Kunemund, Robert M. (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S030000, C117S032000, C117S036000, C438S692000

Reexamination Certificate

active

10525244

ABSTRACT:
There is disclosed a single crystal obtained by a single crystal pulling method, wherein an interval of striations incorporated into the single crystal due to temperature fluctuation of crystal melt at the time of crystal growth is controlled, and a method of growing a single crystal according to a single crystal pulling method, wherein a growth rate and/or a temperature fluctuation period are controlled so that V×F/sin θ may be in a certain range when a growth rate at the time of growing a single crystal is defined as V (mm/min), a temperature fluctuation period of crystal melt is defined as F (min), and an angle to the level surface of a crystal-growth interface is defined as θ. Thereby nanotopology characteristics can be improved from aspects different from the processing conditions of the surface of the wafer and there can be provided a single crystal which can produce a wafer excellent in nanotopology characteristics, especially in nanotopology characteristics measured in 2 mm×2 mm square, and a method of growing a single crystal for growing the single crystal.

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