Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2007-01-17
2009-12-08
Speer, Timothy M (Department: 1794)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S064100, C117S932000
Reexamination Certificate
active
07629054
ABSTRACT:
A single crystal silicon wafer for use in the production of insulated gate bipolar transistors is made of single crystal silicon grown by the Czochralski method and has a gate oxide with a film thickness of from 50 to 150 nm. The wafer has an interstitial oxygen concentration of at most 7.0×1017atoms/cm3, a resistivity variation within the plane of the wafer of at most 5% and, letting tox(cm) be the gate oxide film thickness and S (cm2) be the electrode surface area when determining the TZDB pass ratio, a density d (cm−3) of crystal originated particles (COP) having a size at least twice the gate oxide film thickness which satisfies the formula d≦−ln(0.9)/(S·tox/2). The wafers have an increased production yield and a small resistivity variation.
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Kolisch Hartwell PC
Speer Timothy M
Sumco Corporation
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