Optical: systems and elements – Holographic system or element – Using a hologram as an optical element
Patent
1994-07-28
1996-06-18
Sikes, William L.
Optical: systems and elements
Holographic system or element
Using a hologram as an optical element
359 74, 3151693, 257347, 257353, H01L 2701, G02F 1136, G09C 310
Patent
active
055283977
ABSTRACT:
A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. Pixel arrays form light valves or switches that can be fabricated with control electronics in the thin-film material prior to transfer. The resulting circuit panel is then incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.
REFERENCES:
patent: 3955190 (1976-05-01), Teraishi
patent: 4024626 (1977-05-01), Leupp et al.
patent: 4266223 (1981-05-01), Frame
patent: 4270846 (1981-06-01), Miyamoto
patent: 4321747 (1982-05-01), Takemura et al.
patent: 4393380 (1983-07-01), Hosokawa et al.
patent: 4409724 (1983-10-01), Tasch, Jr. et al.
patent: 4429305 (1984-01-01), Hosokawa et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4583122 (1986-04-01), Ohwada et al.
patent: 4597636 (1986-07-01), Hoshikawa
patent: 4600274 (1986-07-01), Morozumi
patent: 4644338 (1987-02-01), Aoki et al.
patent: 4653858 (1987-03-01), Szydlo et al.
patent: 4653862 (1987-03-01), Morozumi
patent: 4654117 (1987-03-01), Aoki et al.
patent: 4655551 (1987-04-01), Washizuka et al.
patent: 4655552 (1987-04-01), Togashi et al.
patent: 4660935 (1987-04-01), Iwashita et al.
patent: 4662719 (1987-05-01), Di Maria et al.
patent: 4716403 (1987-12-01), Morozumi
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4735495 (1988-04-01), Henkes
patent: 4740782 (1988-04-01), Aoki et al.
patent: 4769680 (1988-09-01), Resor, III et al.
patent: 4770498 (1988-09-01), Aoki et al.
patent: 4772943 (1988-09-01), Nakagawa et al.
patent: 4774205 (1988-09-01), Choi et al.
patent: 4782340 (1988-11-01), Czubatyj et al.
patent: 4807974 (1989-02-01), Hirai
patent: 4808983 (1989-02-01), Benjamin et al.
patent: 4810637 (1989-03-01), Szydlo et al.
patent: 4814830 (1989-03-01), Isohata et al.
patent: 4819038 (1989-04-01), Alt
patent: 4838654 (1989-06-01), Hamaguchi et al.
patent: 4838657 (1989-06-01), Miura et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4855255 (1989-08-01), Goodhue
patent: 4859997 (1989-08-01), Bouron et al.
patent: 4862153 (1989-08-01), Nakatani et al.
patent: 4863877 (1989-09-01), Fan et al.
patent: 4870475 (1989-09-01), Endo et al.
patent: 4870486 (1989-09-01), Nakagawa et al.
patent: 4878086 (1989-10-01), Isohata et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 4917465 (1990-04-01), Conner et al.
patent: 4917468 (1990-04-01), Matsuhashi et al.
patent: 4930874 (1990-06-01), Matsumune et al.
patent: 4935792 (1990-06-01), Tanaka et al.
patent: 4952031 (1990-08-01), Tsunoda et al.
patent: 4961629 (1990-10-01), Kato
patent: 4980308 (1990-12-01), Hyashi et al.
patent: 5013138 (1991-05-01), Roosen et al.
patent: 5020881 (1991-06-01), Matsuda et al.
patent: 5053765 (1991-10-01), Sonehara et al.
patent: 5054887 (1991-10-01), Kato et al.
patent: 5056895 (1991-10-01), Kahn
patent: 5069534 (1991-12-01), Hirai
patent: 5073772 (1991-12-01), Takafuji et al.
patent: 5075674 (1991-12-01), Katayama et al.
patent: 5076543 (1991-12-01), Mandai
patent: 5076666 (1991-12-01), Katayama et al.
patent: 5087113 (1992-02-01), Sakono et al.
patent: 5095304 (1992-03-01), Young
patent: 5099345 (1992-03-01), Kazaki et al.
patent: 5115232 (1992-05-01), Iizuka
patent: 5117298 (1992-05-01), Hirai
Ipri, A. C. et al., "A 600.degree.-650.degree. C. Polysilicon CMOS Process for Fabricating Fully Scanned Active.varies.matrix LCDs," Proceedings of the SID, (29)2:167-171, (1988).
Milnes, A. G., "Semiconductor Heterojunciton Topics: Introduction and Overview," Solid-State Electronics, (20) 2:99-121 (1986).
Hamaguchi, et al., "Device Layer Transfer Technique using Chemo-mechanincal Polishing," Japanese Journal of Applied Physics, 923)10:L815-L817, (Oct. 1984).
Fujii, Eiji et al., "A Laser-Recrystallization Technique for Silicon-TFT Integrated Circuits on Quartz Substrates and Its Application to small-size Monolithic Active-matrix LCD's," Transactions on Electron Devices, (37):121-126, (Jan. 1990).
Sumiyoshi et al., "Device layer Tansferred Poly Si TFT Array For High Resolution Liquid Crystal Projector", IEDM (1989):165-168.
Takahashi et al., "Effects Of Adhesive Properties On SOI Devices Otained by Device Transfer Method", IEEE (1990):147-148.
Stix, "Manufacturing Hurdles Challenge Large-LCD Developers", IEEE Spectrum, Special Report 91989):36-40.
Turner et al., "High-speed Photoconductive Detectors Fabricated in Heteroepitaxial GaAs Layers", Mat. Res. Sec. Symp. Proc. vol. 67 (1986):181-188.
Akiyama et al., "Growth Of GaAs on Si and ITS Application To FETS and LEDS", Mat. Res. Soc. Sump. Proc. vol. 67 (1986):53-64.
Kahn, "High Definiation Projection Display Systems" Flat Information Displays--1990 An Itneractive meeting for Display Users 7 Suppliers to Define & Analyze th Impat of Flat Information Displays on their Products, Stanford Rexources, Inc. Information Associates.
"Three-Terminal Devices: Properties & Characteristics", Stanford Resourcs, Inc. (1989):114-192.
"Liquid crystal displays (lCD's)", Chapter 2, pp. 29-84.
Dingle Brenda
Fan John C. C.
Jacobsen Jeffrey
McClelland Robert
Zavracky Paul M.
Kopin Corporation
Sikes William L.
Trice Ron
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