Single crystal silicon producing method, single crystal...

Details Single crystal silicon producing method, single crystal... Single crystal silicon producing method, single crystal...

2007-06-05

2007-06-05

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S902000

Reexamination Certificate

active

10512022

ABSTRACT:
A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the <110> crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) so that the edge direction (8) of the {111} crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.

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Murthy et al.; “Growth of Dislocation-Free Silicon Crystals in the (110) Direction for Use as Neutron Monochromators,”Journal of Crystal Growth, vol. 52, (1981), pp. 391-395.
Hoshikawa et al.; “Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process,”Japan Journal of Applied Phys., vol. 38 (1999) pp. L1369-L1371.

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