Single crystal silicon on quartz

Details Single crystal silicon on quartz Single crystal silicon on quartz

1992-12-29

1993-11-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 62, 437225, 437974, 437 21, 148DIG12, 148DIG135, 148DIG150, H01L 2176

Patent

active

052583236

ABSTRACT:
A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such as, for example, high mobility thin film transistor integrated drivers for active matrix displays. The method essentially includes depositing an etch stop layer on a single crystal silicon substrate, depositing a single crystal silicon device layer on the etch stop layer, bonding a quartz substrate to the single crystal silicon device layer at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate, grinding away a portion of the silicon substrate and a portion of the adhesive, etching away the remaining portion of the silicon substrate, removing the remaining portion of the adhesive, etching away the etch stop layer, applying a photoresist mask on the single crystal silicon device layer for defining the islands on the single crystal silicon device layer, etching single crystal silicon islands, and then the first non-room-temperature process of diffusion bonding the single crystal silicon islands to the quartz substrate.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 5013681 (1991-05-01), Codbey et al.
patent: 5032544 (1991-07-01), Ito et al.
patent: 5110748 (1992-05-01), Sarma
patent: 5122887 (1992-06-01), Mathewson
patent: 5152857 (1992-10-01), Ito et al.
J. P. Salerno, et al., "Single-Crystal Silicon Transmissive AMLCD", 1992, SID 92 Digest, pp. 63-66.
Yuji Hayashi, et al., "Fully Integrated Poly-Si CMOS LCD with Redundancy", 1991, Proceedings of the SID, vol. 32/4, pp. 297-300.

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