Single crystal silicon ingot having a high arsenic...

Chemistry of inorganic compounds – Silicon or compound thereof

Reexamination Certificate

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C117S013000, C117S019000, C117S928000, C117S931000, C117S932000, C117S953000

Reexamination Certificate

active

07132091

ABSTRACT:
A single crystal silicon ingot having a constant diameter portion that contains arsenic dopant atoms at a concentration which results in the silicon having a resistivity that is less than about 0.003 Ω·cm.

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Notification of Transmittal of the International Search Report or the Declaration for application No. PCT/US02/30991 dated Feb. 17, 2003.

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