Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2006-10-24
2006-10-24
Stein, Stephen (Department: 1775)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S064100, C423S348000, C117S935000
Reexamination Certificate
active
07125608
ABSTRACT:
The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
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Choi Ill Soo
Hong Young Ho
Kim Sang Hee
Kwak Man Seok
Lee Hong Woo
Christie Parker and Hale, LLP
Siltron Inc.
Stein Stephen
LandOfFree
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