Single-crystal silicon carbide ingot, and substrate and...

Details Single-crystal silicon carbide ingot, and substrate and... Single-crystal silicon carbide ingot, and substrate and...

2011-07-05

2011-07-05

Speer, Timothy M (Department: 1784)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S698000, C117S951000

Reexamination Certificate

active

07972704

ABSTRACT:
The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018cm−3to 6×1020cm−3and acceptor-type impurity at a concentration of 1×1018cm−3to 5.99×1020cm−3and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018cm−3to 5.99×1020cm−3, and a substrate and epitaxial wafer obtained therefrom.

REFERENCES:
patent: 09-157092 (1997-06-01), None
patent: 10-182296 (1998-07-01), None
patent: 2000-503968 (2000-04-01), None
patent: 2007-320790 (2007-12-01), None
patent: WO 97/28297 (1997-08-01), None
International Search Report dated Apr. 28, 2009 issued in corresponding PCT Application No. PCT/JP2009/050786.
Yu. M. Tairov and V. F. Tsvetkov, “General Principles of Gowing Large-Size Single Crystals of Various Silicon Carbide Polytypes” Journal of Crystal Growth, vol. 52 (1981) pp. 146-150.

Affiliated with

Also associated with

Rating

Single-crystal silicon carbide ingot, and substrate and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single-crystal silicon carbide ingot, and substrate and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-crystal silicon carbide ingot, and substrate and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2727520