Single crystal SiC and a method of producing the same

Details Single crystal SiC and a method of producing the same Single crystal SiC and a method of producing the same

1998-11-06

2000-04-25

Powell, William

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

428446, 428620, 117 7, 117 9, 117951, 117 84, 117 88, 117 94, 117 97, C30B 104, B32B 904

Patent

active

060539739

ABSTRACT:
The surface 1a of a single crystal .alpha.-SiC substrate 1 is adjusted so as to have a surface roughness equal to or lower than 2,000 angstroms RMS, and preferably equal to or lower than 1,000 angstroms RMS. On the surface 1a of the single crystal .alpha.-SiC substrate 1, a polycrystalline .alpha.-SiC film 2 is grown by thermal CVD to form a complex is placed in a porous carbon container and the carbon container is covered with .alpha.-SiC powder. The complex is subjected to a heat treatment at a temperature equal to or higher than a film growing temperature, i.e., in the range of 1,900 to 2,400.degree. C. in an argon gas flow, whereby single crystal .alpha.-SiC is integrally grown on the single crystal .alpha.-SiC substrate 1 by crystal growth and recrystallization of the polycrystalline .alpha.-SiC film 2. It is possible to stably and efficiently produce single crystal SiC of a large size which has a high quality and in which any crystal nucleus is not generated.

REFERENCES:
patent: 4590130 (1986-05-01), Cline
patent: 5830584 (1998-11-01), Chen et al.
patent: 5909036 (1999-06-01), Tanaka et al.

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