Single-crystal semiconductor devices and method for making them

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148 15, 148172, 156624, 427 33, 427 431, 427 86, 4273761, 428620, H01L 21208

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045644039

ABSTRACT:
A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.

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