Single-crystal semiconductor devices and method for making them

Details Single-crystal semiconductor devices and method for making them Single-crystal semiconductor devices and method for making them

1984-01-27

1986-01-14

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 156624, 427 33, 427 431, 427 86, 4273761, 428620, H01L 21208

Patent

active

045644039

ABSTRACT:
A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the first direction to form a single-crystal seed in the region. An operating layer of polycrystalline or amorphous material on the substrate in contact with the seed is scanned with a beam of electrons having a strip-like configuration. The beam remelts a portion of the seed and creates a molten zone in the layer that recrystallizes as a single crystal by lateral epitaxial recrystallization from the seed.

REFERENCES:
patent: 4187126 (1980-02-01), Radd et al.
patent: 4305973 (1981-12-01), Yaron et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4323417 (1982-04-01), Lam
patent: 4371421 (1983-02-01), Fan et al.
patent: 4382186 (1983-05-01), Denholm et al.
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4414242 (1983-11-01), Nishimura et al.
patent: 4446373 (1984-05-01), Denholm et al.
patent: 4448632 (1984-05-01), Akasaka
patent: 4473433 (1984-09-01), Bosch et al.
patent: 4479847 (1984-10-01), McCaldin et al.

Affiliated with

Also associated with

Rating

Single-crystal semiconductor devices and method for making them does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single-crystal semiconductor devices and method for making them, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-crystal semiconductor devices and method for making them will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-429381