Single crystal scintillator materials and methods for making...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state

Reexamination Certificate

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C117S005000, C117S008000, C117S009000

Reexamination Certificate

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07569109

ABSTRACT:
A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.

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patent: 6143366 (2000-11-01), Lu
patent: 6967330 (2005-11-01), Lempicki et al.
patent: 7208041 (2007-04-01), Lee et al.
patent: 2005/0061982 (2005-03-01), Ichinose et al.
patent: 2006/0054863 (2006-03-01), Dai et al.
C. L. Melcher and J. S. Schweitzer; “Cerium-doped Lutetium Oxyorthosilicate: A Fast, Efficient New Scintillator”; IEEE Transactions on Nuclear Science, 1992, pp. 502-505, vol. 39, No. 4.
Bescher et al.; “New Lutetium Silicate Scintillators”; Journal of Sol-Gel Science and Technology 19, 2000, pp. 325-328.
Vinod K. Sarin; “Formation of Lutetium Silicate by Solid State Diffusion”; Jul. 2005 p. 1, Available at http://event.ua.pt/dsl2005/Sarin.pdf.

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