Single crystal pulling method and apparatus for its implementati

Details Single crystal pulling method and apparatus for its implementati Single crystal pulling method and apparatus for its implementati

1997-01-10

1999-04-06

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 18, 117 30, 117 31, 117214, C30B 3500

Patent

active

058912452

ABSTRACT:
A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264<N<0.07P, where P (Torr) is the internal pressure inside said gas tight container.

REFERENCES:
patent: 5030315 (1991-07-01), Washizuka et al.
patent: 5524571 (1996-06-01), Kawasaki et al.
patent: 5690733 (1997-11-01), Nagai et al.

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