Single crystal pulling method

Details Single crystal pulling method Single crystal pulling method

1998-08-31

2000-06-27

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 31, 117217, C30B 1520

Patent

active

060802383

ABSTRACT:
After whole raw material filled in a crucible is melted by plural heaters provided around the crucible, outputs of the heaters are lowered so that molten liquid is maintained at a predetermined temperature. A seed crystal is brought into contact with a surface of the molten liquid, and while a height of the surface of the molten liquid is being maintained in a heating region of a topmost heater, a pulling shaft is pulled up at a predetermined speed so that a single crystal is grown in a lower position of the seed crystal. At this time, in order that the pulled single crystal has required oxygen concentration during the pulling of the single crystal, a ratio of the output of the topmost heater to the outputs of all the heaters is set to a value calculated by R.sub.PW .gtoreq.0.88R.sub.T (R.sub.PW : output ratio of the topmost heater) based on the ratio R.sub.T of the height of the topmost heater to the height of the crucible.

REFERENCES:
patent: 5363796 (1994-11-01), Kobayashi et al.
patent: 5766347 (1998-06-01), Shimomura et al.
patent: 5853480 (1998-12-01), Kubota et al.
"Single Crystal Growing Apparatus," Electronic Material, Extra Issue, Makoto Ito et al., Dec. 1995.

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