Single crystal pulling device and method and superconducting...

Details Single crystal pulling device and method and superconducting... Single crystal pulling device and method and superconducting...

2006-01-10

2006-01-10

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S032000, C117S201000, C117S213000, C117S218000, C117S917000

Reexamination Certificate

active

06984264

ABSTRACT:
A single crystal pulling device is composed of a cylindrical pulling furnace, a crucible disposed in the pulling furnace in which a single crystal material for a semiconductor is poured, a cylindrical vacuum vessel coaxially disposed around the pulling furnace, and a superconducting magnet composed of a plurality pairs of coils arranged inside the vacuum vessel so as to generate magnetic field. The superconducting coils are arranged on the same horizontal plane of the cylindrical vacuum vessel, and each of the paired superconducting coils includes coils set so as to oppose to each other with respect to a central axis of the cylindrical vacuum vessel so that one coil of one pair of coils and one coil of another pair of coils adjacent to that one pair of coils constitutes a set angle, directing towards the inside of the cylindrical vessel, in a range of 100° to 130°.

REFERENCES:
patent: 5851283 (1998-12-01), Hoshi et al.
patent: 5938836 (1999-08-01), Tomioka et al.
patent: 6423285 (2002-07-01), Itoi et al.
patent: 2001-203106 (2001-07-01), None

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