Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1998-03-10
2000-06-20
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117217, 117911, C30B 3500
Patent
active
060773480
ABSTRACT:
The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. According to the present invention, a constricted portion is formed under a seed crystal, and a single crystal is pulled up by supporting the constricted portion, and a support base 30 is used, which has an opening 22, serving as a through-hole, and a slit 34, which leads from the opening to outer periphery of the support base, and a portion with larger diameter of the constricted portion is supported from below in linear contact manner. The support base 30 further comprises a recess 32, which leads to the opening 22, and it can be designed and selected to have such configuration as to suit the shape of the constricted portion. The support base 30 can be moved between a non-support position and a support position by operating a moving unit. The driving unit of the seed crystal lift mechanism and the driving unit of the support base moving mechanism are accommodated in an accommodation container 10a, and a mechanism for moving up and down the accommodation container may be provided.
REFERENCES:
patent: 4367199 (1983-01-01), Jericho
patent: 4738832 (1998-04-01), Drechel
patent: 5843226 (1998-12-01), Kimura et al.
patent: 5879448 (1999-03-01), Urang et al.
patent: 5882397 (1999-03-01), Iino et al.
Hiteshew Felisa
Super Silicon Crystal Research Institute Corp.
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