Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1993-10-14
1995-09-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117213, 117218, 117202, 117 30, 117 35, C30B 1514
Patent
active
054508142
ABSTRACT:
A plurality of shield blades 31 for defining an opening 25 surrounding a single crystal 15 are provided between a melt 14 received in a crucible 10 and a screen 30. The shield blades 21 are carried by operation rods 23 so as to make the gap between the inner edges of the shield blades 23 and the surface of the single crystal 15 constant. Since crystal growth continues under the same condition from the beginning to the end, an obtained single crystal 15 is free from defects such as dislocations and excellent in homogenieity.
REFERENCES:
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patent: 4390505 (1983-08-01), Taylor et al.
patent: 4402786 (1983-09-01), Little
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 5316742 (1994-05-01), Tomioka et al.
Shiraishi Yutaka
Terashima Kazutaka
Kazutaka Terashima
Kunemund Robert
Research Development Corporation of Japan
Yutaka Shiraishi
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