Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1993-02-02
1994-11-08
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117217, C30B 1514, C30B 1520
Patent
active
053617215
ABSTRACT:
A single crystal pulling apparatus of Czochralski technique type including (i) a cylindrical partition adapted to divide the surface portion of the melt into an inner part and an outer part, the former being where the single crystal is grown and the latter being where granular polycrystal material is supplied, (ii) a flat ring having heat reflecting and insulating property held horizontally above the melt, and (iii) a vertically shiftable purge tube suspended centrally into the heating chamber adapted to enter into the inner hole of the flat ring.
REFERENCES:
patent: 4330361 (1982-05-01), Kuhn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Kulehner
patent: 4915773 (1990-04-01), Kravetsky et al.
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4981549 (1991-07-01), Yamashita et al.
patent: 5129986 (1992-07-01), Seki et al.
patent: 5196173 (1993-03-01), Arai et al.
Fusegawa Izumi
Takano Kiyotaka
Yamagishi Hirotoshi
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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