Single crystal pulling apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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117 18, C30B 3500

Patent

active

058580875

ABSTRACT:
The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11. The entry point of the source material 8 is as far as possible from the inner crucible 12, and close to the outer wall of the outer crucible 11, and hence the added source material 8 is melted rapidly by heat from a heater surrounding the outer crucible 11, and any gas bubbles generated as a result of the introduction of the source material 8, are unlikely infuse into the inner crucible 12.

REFERENCES:
patent: 5306474 (1994-04-01), Kida et al.
patent: 5324488 (1994-06-01), Klingshion et al.
patent: 5580171 (1996-12-01), Lim et al.
patent: 5584016 (1996-12-01), AlteKruger et al.
patent: 5690733 (1997-11-01), Nagaii et al.

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