Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-12-26
1999-02-23
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117214, 117900, C30B 3500
Patent
active
058739386
ABSTRACT:
A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.
REFERENCES:
patent: 5021118 (1991-06-01), Kawasaki
patent: 5474022 (1995-12-01), Abe et al.
Atami Takashi
Furuya Hisashi
Kida Michio
Garrett Felisa
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon Corporation
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