Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1992-10-15
1994-12-20
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117208, 117214, C30B 1520
Patent
active
053738055
ABSTRACT:
A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring is connected to the lower end of the purge tube, and a cylindrical quartz partition ring made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.
REFERENCES:
patent: 4330361 (1982-05-01), Kahn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4957713 (1990-09-01), Kravetsky et al.
patent: 4981549 (1991-07-01), Yamashita et al.
patent: 5129986 (1992-07-01), Seki et al.
patent: 5196173 (1993-03-01), Arai et al.
Fusegawa Izumi
Takano Kiyotaka
Yamagishi Hirotoshi
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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