Single crystal pulling apparatus

Details Single crystal pulling apparatus Single crystal pulling apparatus

1997-01-29

1999-04-20

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

65 173, 65144, C30B 3500

Patent

active

058955275

ABSTRACT:
The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.

REFERENCES:
patent: 4416680 (1983-11-01), Bruning et al.
patent: 4528763 (1985-07-01), Albrecht
patent: 4632686 (1986-12-01), Brown et al.
patent: 5306473 (1994-04-01), Nakajima et al.

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