Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-01-10
1999-02-16
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117200, 117214, C30B 3500
Patent
active
058715819
ABSTRACT:
A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.
REFERENCES:
patent: H520 (1988-09-01), Johnson et al.
patent: 5021225 (1991-06-01), Yamashita et al.
patent: 5314667 (1994-05-01), Lim et al.
patent: 5650008 (1997-07-01), Kou et al.
Atami Takashi
Furuya Hisashi
Kida Michio
Taguchi Hiroaki
Garrett Felisa
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon Corporation
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