Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-01-10
1998-07-14
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
18213, C30B 3500
Patent
active
057797927
ABSTRACT:
The present invention provides an improved single crystal pulling apparatus for pulling a single crystal semiconductor such as silicon or gallium arsenide. The apparatus of the present invention comprises a gas tight container, a crucible which is disposed inside the container, a heater, and a pair of coils to apply a cusp magnetic field in the semiconductor melt. The crucible is separated into two regions by a cylindrical partition body, and an outside region is used to supply source material and to melt the source material and an inside region is used for pulling up the single crystal. The inside and outside regions are communicated with the communication passage provided at the bottom of the partition body. Electrical currents in opposing directions are applied to a pair of coils for generating in the melt a cusp magnetic field which includes a vertical portion and a horizontal portion relative to the crucible. By positioning the vertical portion of the cusp magnetic field at the position of the communication passage and the horizontal portion below the semiconductor melt, the flow rate of the melt passing through the communication passage is reduced and the convection within the melt is suppressed. Consequently, high quality semiconductor single crystals can be obtained.
REFERENCES:
patent: 5009865 (1991-04-01), Boden et al.
patent: 5178720 (1993-01-01), Frederick
patent: 5196085 (1993-03-01), Szekely et al.
patent: 5485802 (1996-01-01), Artekruger et al.
Atami Takashi
Furuya Hisashi
Kida Michio
Garrett Felisa
Mitsubishi Materials Corporation
Mitsubishi Materials Silicon Corporation
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