Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-07-01
1998-04-07
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117900, C30B 3500
Patent
active
057359512
ABSTRACT:
A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.
REFERENCES:
patent: 4350560 (1982-09-01), Helgeland et al.
patent: 5254319 (1993-10-01), Oda et al.
patent: 5330729 (1994-07-01), Oda et al.
Iino Eiichi
Kimura Masanori
Mizuishi Koji
Takano Kiyotaka
Yamagishi Hirotoshi
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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